找到约 1215 条相关结果
... critical parameter that affects switching losses of power MOSFET.In switching applications,it has some limitations to ...
... for reliable, high-perform- ance MOSFET application design based on the characteristics of MOSFET gate drive circuit and ...
... 驱动也有一定的借鉴意义.With MOSFET as its main power switch devices and being ... the turn-on and turn-off processes of MOSFET are presented. Experimental results show the feasibility of ...
... evolving associated with the feature size scaling of MOSFET device.This paper mainly deals with the review ... key problems as models and parameters involved in MOSFET mismatch calculation for analog IC design.Also their ...
... paper proposes a model which based on the MOSFET circuit for non-visual photo sensitive system using ... 12. 0 software. There is a consistence between MOSFET circuit model and non-visual photo sensitive system ...
... modeling of the high frequency equivalent circuit of MOSFET and its technology of parameter extraction were studied ...
... 桥由四个MOSFET组成,副边次级驱动电路由两个MOSFET及一双向 ... side H consists of four MOSFET,secondary side drive circuit consists of two MOSFET and double-throw switch ...
... 大功率(1 500W 以上) 有些困难。对于MOSFET 来说, 仅由多子承担的电荷运输 ... 的开关时间。POWER MOSFET 其高频特性十分优秀，所以MOSFET 可用于较高 ... ,频率范围受限, 开关损耗也很明显;MOSFET 关闭时电流下降速度快, 可用于 ...
... , 以及改进方法, 对减少实际应用中MOSFET 破坏性损坏有一定意义对高频的DC/ DC 转换器, 功率MOSFET 是一个关键的器件。快速的开关可以降低开关损耗, 但是在MOSFET 漏级上dU/ dt 也变得 ... 没有正常的门极触发信号时MOSFET 开通, 这样会产生更多的功耗 ...
... 图2所示的电路使用一个MOSFET实现电池反装保护。当电池连接到电路后，MOSFET的体二极管开始导通电流。 ... ，等于Vb-Vd。其中Vd是MOSFET在给定负载情况下的体二极管 ... 出现后，MOSFET导通，并且将体二极管短路。此时MOSFET上的电压 ...
